NE76118_00 Datasheet, PDF (1/4 Pages) NEC – GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER

GaAs MESFET
L TO S BAND LOW NOISE AMPLIFIER
NE76118
FEATURES
• LOW COST MINIATURE PLASTIC PACKAGE
(SOT-343)
• LOW NOISE FIGURE:
0.8 dB typical at 2 GHz
• HIGH ASSOCIATED GAIN:
13.5 dB typical at 2 GHz
• LG = 1.0 µm, WG = 400 µm
• TAPE & REEL PACKAGING
DESCRIPTION
The NE76118 is a low cost gallium arsenide metal semicon-
ductor field effect transistor housed in a miniature (SOT-343)
plastic surface mount package. The device is fabricated using
ion implantation for improved RF and DC performance, reli-
ability, and uniformity. Its low noise figure, high gain, small
size and weight make it an ideal low noise amplifier transistor
in the 1-4 GHz frequency range. The NE76118 is suitable for
GPS, PCS, WLAN, MMDS, TVRO, and other commercial
applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 3 V, ID= 10 mA
4
25
20
GA
3
15
10
2
5
0
1
NF
0
0.5
1
2 3 4 5 6 7 8 910
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOL
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
UNITS
NE76118
18
MIN
TYP
MAX
NF
GA
P1dB
G1dB
IDSS
VP
gm
IGSO
Noise Figure at VDS = 3 V, ID = 10 mA
f = 2 GHz
f = 4 GHz
Associated Gain at VDS = 3 V, ID = 10 mA
f = 2 GHz
f = 4 GHz
Output Power at 1 dB Gain Compression Point, f = 2 GHz
VDS = 3 V, IDS = 10 mA
VDS = 3 V, IDS = 30 mA
Gain at P1dB, f = 2 GHz
VDS = 3 V, IDS = 10 mA
VDS = 3 V, IDS = 30 mA
Saturated Drain Current at VDS = 3 V, VGS = 0 V
Pinch Off Voltage at VDS = 3 V, ID = 100 µA
Transconductance at VDS = 3 V, ID = 10 mA
Gate to Source Leakage Current at VGS = -5 V
dB
0.8
dB
0.9
1.4
dB
13.5
dB
9.5
10.5
dBm
12
dBm
14
dB
13
dB
14
mA
30
100
V
-3.0
-0.5
mS
20
45
µA
10
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories