NE76118 Datasheet, PDF (1/8 Pages) NEC – L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

D_DA_AT_TA_A S_SH_HE_EE_ET_T
GaAs MES FET
NE76118
L to S BAND LOW NOISE AMPLIFIER
N-CHANNEL GaAs MES FET
DESCRIPTION
NE76118 is a n-channel GaAs MES FET housed in MOLD package.
FEATURES
• Low noise figure
NF = 0.8 dB TYP. at f = 2 GHz
• High associated gain
Ga = 13.5 dB TYP. at f = 2 GHz
• Gate width : Wg = 400 Pm
• 4 pins super mini mold
• Tape & reel packaging only available
ORDERING INFORMATION
PART
NUMBER
NE76118-T1
NE76118-T2
QUANTITY
3 Kpcs/Reel.
3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide. Pin 3 (Source),
Pin 4 (Drain) face to perforation side of the
tape.
Embossed tape 8 mm wide. Pin 1 (Source),
Pin 2 (Gate) face to perforation side of the
tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: NE76118)
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)
Drain to Source Voltage
VDS
5.0
V
Gate to Source Voltage
VGSO
–5.0
V
Gate to Drain Voltage
VGDO
–6.0
V
Drain Current
ID
IDSS
mA
Total Power Dissipation
Ptot
130
mW
Channel Temperature
Tch
150
qC
Storage Temperature
Tstg –65 to +150 qC
PACKAGE DIMENSIONS
in millimeters
2.1±0.2
1.25±0.1
PIN CONNECTIONS
1. Source
2. Gate
3. Source
4. Drain
Document No. P11129EJ2V0DS00 (2nd edition)
Date Published January 1997 N
Printed in Japan
©
1996