NE76100_99 Datasheet, PDF (1/8 Pages) NEC – GENERAL PURPOSE GaAs MESFET

GENERAL PURPOSE _NE76100
GaAs MESFET
FEATURES
• LOW NOISE FIGURE:
NF = 0.8 dB typical at f = 4 GHz
• HIGH ASSOCIATED GAIN:
GA = 12.0 dB typical at f = 4 GHz
• LG = 1.0 µm, WG = 400 µm
DESCRIPTION
NE76100 is a high performance gallium arsenide metal semi-
conductor field effect transistor chip. Its low noise figure makes
this device appropriate for use in the second or third stages of
low noise amplifiers operating in the 1-12 GHz frequency
range. The device is fabricated using ion implantation for
improved RF and DC performance, reliability, and uniformity.
The NE76100 is suitable for a wide variety of commercial and
industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 3 V, IDS = 10 mA
4
24
3.5
21
3
18
Ga
2.5
15
2
12
1.5
1
0.5
0
1
NF
10
Frequency, f (GHz)
9
6
3
0
20
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
NE76100
00 (CHIP)
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NFOPT¹
Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz
dB
0.8
1.4
GA¹
Associated Gain at VDS = 3 V, ID = 10 mA, f = 4 GHz
dB
12.0
P1dB
Output Power at 1 dB Gain Compression Point, f = 4 GHz
VDS = 3 V, IDS = 10 mA
VDS = 3 V, IDS = 30 mA
dBm
dBm
12.5
15.0
G1dB
Gain at P1dB, f = 4 GHz
VDS = 3 V, IDS = 10 mA
VDS = 3 V, IDS = 30 mA
dB
11.5
dB
13.5
IDSS
Saturated Drain Current at VDS = 3 V, VGS = 0
mA
30
60
100
VP
Pinch Off Voltage at VDS = 3 V, ID = 100 mA
V
-3.0
-1.1
-0.5
gm
Transconductance at VDS = 3 V, ID = 10 mA
mS
20
45
IGSO
Gate to Source Leak Current at VGS = -5 V
µA
1.0
10
RTH2
Thermal Resistance
°C/W
190
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects
for 10 samples.
2. Chip mounted on an infinite heat sink.
California Eastern Laboratories