NE76084 Datasheet, PDF (1/12 Pages) NEC – C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

DATA SHEET
GaAs MES FET
NE76084
C to Ku BAND LOW NOISE AMPLIFIER
N-CHANNEL GaAs MES FET
FEATURES
• Low noise figure & High associated gain
NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz
• Gate length: Lg = 0.3 µm
• Gate width : Wg = 280 µm
ORDERING INFORMATION
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ± 0.2
1
L
L
SUPPLYING
PART NUMBER
FORM
LEAD LENGTH MARKING
NE76084-SL STICK
L = 1.7 mm MIN.
E
NE76084-T1
Tape & reel
L = 1.0 ± 0.2 mm
1000 pcs./reel
NE76084-T1A Tape & reel
L = 1.0 ± 0.2 mm
5000 pcs./reel
E
2
4
L
L
3
0.5 TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDS
5.0
V
Gate to Source Voltage VGS
–3.0
V
Gate to Drain Voltage
VGD
–5.0
V
Drain Current
ID
IDSS
mA
Total Power Dissipation Ptot
240
mW
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg –65 to +175 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
1. Source
2. Drain
3. Source
4. Gate
PART NUMBER
NE76084
NE76084-2.4
PACKAGE CODE
84
84
UNIT TEST CONDITIONS
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. MIN. TYP. MAX.
Gate to Source Leak Current IGSO
10
10
µA VGS = –4 V
Saturated Drain Current
IDSS
15
30
50
15
30
50
mA VDS = 3 V, VGS = 0 V
Gate to Source Cutoff Voltage VGS(off)
–0.5 –0.8 –3.0 –0.5 –0.8 –3.0
V
VDS = 3 V, IDS = 100 µA
Transconductance
gm
30
40
70
30
40
70
mS VDS = 3 V, IDS = 10 mA
Noise Figure
NF
1.6 1.8
1.8
2.4
dB VDS = 3 V, IDS = 10 mA
Associated Gain
Ga
8.0 9.0
8.0 9.0
dB f = 12 GHz
Document No. P11843EJ2V0DS00 (2nd edition)
(Previous No. TC-2259)
Date Published August 1996 P
Printed in Japan
©
1989