NE76038 Datasheet, PDF (1/6 Pages) NEC – LOW NOISE L TO Ku-BAND GaAs MESFET

LOW NOISE
L TO Ku-BAND GaAs MESFET
NE76038
FEATURES
• LOW NOISE FIGURE:
1.8 dB typical at 12 GHz
• HIGH ASSOCIATED GAIN:
7.5 dB typical at 12 GHz
• LG = 0.3 µm, WG = 280 µm
• LOW COST PLASTIC PACKAGING
• TAPE & REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
NE76038 is a high performance gallium arsenide metal
semiconductor field effect transistor housed in a plastic
package. Its low noise figure makes this device appropriate
for use in the second or third stages of low noise amplifiers
operating in the 1 - 14 GHz frequency range. The device is
fabricated using ion implantation for improved RF and DC
performance, reliability, and uniformity. These devices fea-
ture a recessed 0.3 micron gate and triple epitaxial technol-
ogy.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 3 V, IDS = 10 mA
4
24
3.5
21
Ga
3
18
2.5
15
2
12
1.5
9
1
6
NF
0.5
3
0
0
1
10
20
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
NE76038
38
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NFOPT¹
Optimum Noise Figure at VDS = 3 V, IDS = 10 mA
f = 4 GHz
f = 12 GHz
dB
0.8
1.2
dB
1.8
GA
Associated Gain at VDS = 3 V, IDS = 10 mA
f = 4 GHz
f = 12 GHz
dB
12.0
13.0
dB
7.5
IDSS
Saturated Drain Current at VDS = 3 V, VGS = 0 V
mA
15
30
50
VP
Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA
V
-3.0
-0.8
-0.5
gm
Transconductance at VDS = 3 V, IDS = 10 mA
mS
30
40
70
IGSO
Gate to Source Leakage Current at VGS = -3 V
µA
10
Note:
1. Typical values of noise figures are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit
with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go"
screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories