NE76000 Datasheet, PDF (1/6 Pages) NEC – LOW NOISE L TO Ku BAND GaAs MESFET

LOW NOISE
L TO Ku BAND GaAs MESFET ^NE76000
FEATURES
• LOW NOISE FIGURE
NF = 1.6 dB TYP at f = 12 GHz
• HIGH ASSOCIATED GAIN
GA = 9 dB TYP at f = 12 GHz
• LG = 0.3 µm, WG = 280 µm
• ION IMPLANTATION
DESCRIPTION
The NE76000 provides a low noise figure and high associated
gain through K-Band. The NE760 devices are fabricated by
ion implantation for improved RF and DC performance, reli-
ability, and uniformity. These devices feature a recessed 0.3
micron gate and triple epitaxial technology. The surface of the
device, except for bonding pads, is passivated with SiO2 and
Si3N4 for scratch protection as well as surface stability.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
VDS = 3 V, IDS = 10 mA
4
24
3.5
21
Ga
3
18
2.5
15
2
12
1.5
9
1
6
NF
0.5
3
0
0
1
10
20
Frequency, f (GHz)
ELECTRICAL SPECIFICATIONS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NFOPT1
GA1
P1dB
IDSS
VP
gm
IGSO
RTH (CH-C)2
PARAMETERS AND CONDITIONS
Optimum Noise Figure at VDS = 3 V, IDS = 10 mA,
f = 4 GHz
f = 12 GHz
Associated Gain at VDS = 3 V, IDS = 10 mA,
f = 4 GHz
f = 12 GHz
Output Power at 1 dB Compression, VDS = 3 V, IDS = 30 mA, f = 12 GHz
Saturated Drain Current at VDS = 3 V, VGS = 0
Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA
Transconductance, VDS = 3 V, IDS = 10 mA
Gate to Source Leakage Current, VGS = -4 V
Thermal Resistance (Channel to Case)
UNITS
NE76000
00 (CHIP)
NE76000L
00 (CHIP)
MIN TYP MAX MIN TYP MAX
dB
0.6
dB
1.6 1.8
1.8
dB
dB
dBm
mA
V
mS
µA
°C/W
13.0
8.0 9.0
8.0
14.5
15 30 50 50
80
-3.0 -0.8 -0.5 -3.0 -0.8 -0.5
30.0 40.0
30.0
1.0 10.0
1.0
190
190
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer; wafer rejection criteria for standard devices is 2 rejects for 10
samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories