NE734 Datasheet, PDF (1/5 Pages) NEC – NPN SILICON GENERAL PURPOSE TRANSISTOR

NPN SILICON GENERAL NE734
PURPOSE TRANSISTOR SERIES
FEATURES
• LOW NOISE FIGURE: < 3 dB at 500 MHz
• HIGH GAIN: 15 dB at 500 MHz
• HIGH GAIN BANDWIDTH PRODUCT: 2 GHz
(3 GHz for the NE73435)
• SMALL COLLECTOR CAPACITANCE: 1 pF
• HIGH RELIABILITY METALLIZATION
DESCRIPTION
The NE734 series of NPN silicon general purpose UHF tran-
sistors provide the designer with a wide selection of reliable
transistors for high speed logic and wide-band low noise
amplifier applications. The series uses NEC's highly reliable
platinum-silicide, titanium, platinum, and gold metallization
system to assure uniform performance and reliability. The
30 (SOT 323 STYLE)
35 (MICRO-X)
NE73433 is in the plastic Mini-Mold package designed for
high-speed automated assembly operations for large volume
hybrid ICs. For hybrid MIC applications requiring more perfor-
mance, the NE73435 is recommended. This device is pack-
aged in the economical metal-ceramic, hermetic Micro-X pack-
age.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
fT
NFMIN
MAG
|S21E|²
hFE
ICBO
IEBO
CCB
PT
RTH
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 5 mA
Minimum Noise Figure² at
VCE = 10 V, IC = 3 mA, f = 0.5 GHz
VCE = 10 V, IC = 5 mA, f = 0.9 GHz
Maximum Available Gain³ at
VCE = 10 V, IC = 10 mA, f = 0.5 GHz
f = 1 GHz
Insertion Power Gain at VCE = 10 V, IC = 10 mA,
f = 0.5 GHz
f = 1 GHz
Forward Current Gain Ratio at
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 5 mA
Collector Cutoff Current at VCB = 15 V, IE = 0
Emitter Cutoff Current at VEB = 2 V, IC = 0
Collector to Base Capacitance⁴ at
VCB = 10 V, IC = 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance (Junction to Case)
UNITS
GHz
GHz
dB
dB
dB
dB
dB
dB
µA
µA
pF
mW
°C/W
NE73430
2SC4185
30
MIN
TYP MAX
2.3
4.0
17
8
40
100
180
0.1
1.5
0.75
150
833
NE73435
2SC2148
35
MIN
TYP
MAX
1.5
3.0
2.1
3.5
18
13
16
8
9
25
100
200
0.1
0.1
.55
1.5
250
550
Notes:
1. Electronic Industrial Association of Japan.
2. Input and output are tuned for optimum noise figures.
3. Maximum Available Gain (MAG) is calculated
( ). MAG = ^|S21| K ± K ² - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = ^|S21| , K = ^{1 + | ∆ | 2 - |S11| 2 - |S22| 2} , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
4. CCB measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the
guard terminal.
California Eastern Laboratories