NE722S01 Datasheet, PDF (1/6 Pages) NEC – NECs C TO X BAND N-CHANNEL GaAs MES FET

NEC's C TO X BAND
N-CHANNEL GaAs MES FET ^NE722S01
FEATURES
• HIGH POWER GAIN:
GS = 6 dB TYP at f = 12 GHz
• OUTPUT POWER (at 1 dB compression):
15 dB TYP at f = 12 GHz
• LOW NOISE/HIGH GAIN:
NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz
• GATE LENGTH: LG = 0.8 µm (recessed gate)
• GATE WIDTH: WG = 400 µm
DESCRIPTION
NEC's NE722S01 is a low cost GaAs MESFET suitable for
both amplifier and oscillator applications through X-band.
The device features a 0.8 micron recessed gate, triple
epitaxial technology and is fabricated using ion implantation
for improved RF and DC performance and uniformity. This
device's low phase noise and high fT makes it a excellent
choice for oscillator applications on a digital LNB (Low
Noise Block). The NE722S01 is housed in a low cost plastic
package which is available in Tape and Reel.
NEC's stringent quality assurance and test procedures
ensure the highest reliability performance.
APPLICATIONS
• C to X band low noise amplifiers
• C to X band oscillators
OUTLINE DIMENSION (Units in mm)
PACKAGE OUTLINE SO1
2.0 ± 0.2
1
2.0 _{± 0.2}
2
P
0.5
TYP
4
2.0±0.2
0.125 ± 0.05
3
0.65 TYP
1.9 ± 0.2
1.6
1. Source
2. Drain
3. Source
4. Gate
1.5 MAX
0.4 MAX
4.0 ± 0.2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
IGSO
PARAMETERS AND CONDITIONS
Gate to Source Leak Current, VGS = -5 V
IDSS
Saturated Drain Current, VDS = 3 V, VGS = 0 V
VGS
Gate to Source Cutoff Voltage, VDS = 3 V, ID = 100 µA
gm
Transconductance, VDS = 3 V, IDS = 30 mA
GS
Power Gain, VDS = 3 V, IDS = 30 mA, f = 12 GHz
P1dB
Output Power at 1 dB Gain Compression Point at
VDS = 3 V, IDS = 30 mA, f = 12 GHz
NF
Noise Figure, VDS = 3 V, IDS = 10 mA, f = 4 GHz
Ga
Associated Gain, VDS = 3 V, IDS = 10 mA, f = 4 GHz
UNITS
uA
mA
V
mS
dB
dBm
dB
dB
NE722S01
S01
MIN
TYP
MAX
–
1.0
10
60
90
120
-0.5
–
-4.0
20
45
–
–
6
–
15.0
–
0.9
–
–
12
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California Eastern Laboratories