NE721S01 Datasheet, PDF (1/5 Pages) NEC – GENERAL PURPOSE L TO X-BAND GaAs MESFET

GENERAL PURPOSE _NE721S01
L TO X-BAND GaAs MESFET
FEATURES
• HIGH POWER GAIN:
7 dB TYP at 12 GHz
• HIGH OUTPUT POWER:
15 dBm TYP at 12 GHz
• LG = 0.8 µm, WG = 330 µm
• LOW PHASE NOISE:
-110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz
• LOW COST PLASTIC PACKAGE
DESCRIPTION
The NE721S01 is a low cost 0.8 µm recessed gate GaAs
MESFET, suitable for both amplifier and oscillator applica-
tions. Larger gate geometry make this device ideal for second
and third stages of low noise amplifiers operating in the 1-12
GHz frequency range. The NE721S01 is fabricated with an
epitaxial process resulting in excellent phase noise in oscilla-
tor applications up to 14 GHz. NEC's latest high performance/
low cost plastic packaging technology make the NE721S01
suitable for GPS, TVRO, DBS, PRD and other commercial
applications.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S01
2.0 ± 0.2
1
2.0 _{± 0.2}
2
1. Source
2. Drain
3. Source
4. Gate
0.125 ± 0.05
J
4
3
0.65 TYP.
1.9 ± 0.2
1.6
0.4 MAX
4.0 ± 0.2
Part Number
Designator (Letter).
When the letter is
upright, the gate lead
is to the right.
ORDERING INFORMATION
PART NUMBER
QTY
PACKAGE
NE721S01-T1
1K/Reel
S01
NE721S01
Bulk up to 4K
S01
NE721S01-T1B
4K/Reel
S01
LEAD
LENGTH
1.0 mm
1.0 mm
1.0 mm
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOL
PN
GS
P1dB
IDSS
VP
gm
IGSO
RTH
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Phase Noise at VDS = 3 V, ID = 30 mA, f = 12 GHz, 100 KHz offset
Power Gain at VDS = 3 V, ID = 30 mA, f = 12 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 3 V, IDS = 30 mA
Saturated Drain Current at VDS = 3 V, VGS = 0
Pinch Off Voltage at VDS = 3 V, ID = 100 µA
Transconductance at VDS = 3 V, ID = 10 mA
Gate to Source Leak Current at VGS = -5 V
Thermal Resistance
UNITS
dBc/Hz
dB
dBm
mA
V
mS
µA
°C/W
NE721S01
S01
MIN
TYP
MAX
-110
7.0
15.0
30
60
100
-4.0
-2.0
-0.5
20
40
1.0
10
300
California Eastern Laboratories