NE71383B Datasheet, PDF (1/8 Pages) NEC – L to Ku Band Low Noise N-Channel GaAs MESFET

L to Ku Band Low Noise _NE71383B
N-Channel GaAs MESFET
FEATURES
• LOW NOISE FIGURE:
NF = 0.6 dB typ at f = 4 GHz
NF = 1.6 dB typ at f = 12 GHz
• HIGH ASSOCIATED GAIN:
14 dB typ at f = 4 GHz
• GATE WIDTH: WG = 280 µm
• GATE LENGTH: LG = 0.3 µm
• EPITAXIAL TECHNOLOGY
• LOW PHASE NOISE PERFORMANCE
DESCRIPTION
The NE71383B is a high performance GaAs MESFET provid-
ing a low noise figure and high associated gain through Ku-
band. This device features a recessed 0.3 micron gate and
triple epitaxial technology, and is ideal for low phase noise
oscillator and buffer amplifier applications. The NE71383B is
housed in a hermetically sealed metal/ceramic package.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
NF
Noise Figure , VDS = 3V, IDS = 10 mA, f = 4 GHz
VDS = 3V, IDS = 10 mA, f = 12 GHz
GA
Associated Gain, VDS = 3V, IDS = 10 mA, f = 4 GHz
VDS = 3V, IDS = 10 mA, f = 12 GHz
P1dB
Output Power at 1 dB Gain Compression Point,
VDS = 3 V, IDS = 30 mA, f = 12 GHz
IDSS
Saturated Drain Current, VDS = 3 V, VGS = 0 V
gM
Transconductance, VDS = 3 V, IDS = 10 mA
IGSO
Gate to Source Leakage Current, VGS = -5 V
VGS(off)
Gate to Source Cutoff Voltage, VDS = 3 V, IDS = 100 µA
RTH
Thermal Resistance (Channel to Case)
NOISE FIGURE, ASSOCIATED GAIN
vs. FREQUENCY
2.5
24
VDS = 3 V
lD = 10 mA
2
20
1.5
16
GA
1.0
12
0.5
0
1
8
NF
4
2
4 6 8 10 14 20 30
Frequency, f (GHz)
NE71383B
83B
UNITS
MIN
TYP
MAX
dB
0.6
0.7
mS
1.6
1.8
dB
11.5
14.0
dB
8.0
9.5
dBm
mA
20
mS
20
µA
V
-0.5
°C/W
14.5
40
120
50
1.0
10
-1.1
-3.5
450
California Eastern Laboratories