NE71300 Datasheet, PDF (1/8 Pages) NEC – LOW NOISE L TO K-BAND GaAs MESFET

LOW NOISE _NE71300
L TO K-BAND GaAs MESFET
FEATURES
• LOW NOISE FIGURE
NF = 1.6 dB TYP at f = 12 GHz
• HIGH ASSOCIATED GAIN
GA = 9.5 dB TYP at f = 12 GHz
• LG = 0.3 µm, WG = 280 µm
• EPITAXIAL TECHNOLOGY
• LOW PHASE NOISE
DESCRIPTION
The NE71300 features a low noise figure and high associ-
ated gain through K-band by employing a recessed 0.3 micron
gate and triple epitaxial technology. The active area of the
chip is covered with Si02 and Si3N4 for scratch protection as
well as surface stability. This device is suitable for both
amplifier and oscillator applications in the consumer and
industrial markets.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
VDS = 3 V, IDS = 10 mA
3
24
2.5
21
2
18
GA
1.5
15
1
12
NF
0.5
9
0
1
2
6
10
20 30
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
NFOPT1
GA1
P1dB
IDSS
VP
gm
IGSO
RTH (CH-C)2
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Optimum Noise Figure, VDS = 3 V, IDS = 10 mA,
f = 4 GHz
f = 12 GHz
Associated Gain, VDS = 3 V, IDS = 10 mA,
f = 4 GHz
f = 12 GHz
Output Power at 1 dB Compression, VDS = 3 V, IDs = 30 mA,
f =12 GHz
Saturated Drain Current, VDS = 3 V, VGS = 0
Pinch-Off Voltage, VDS = 3 V, IDS = 0.1 mA
Transconductance, VDS = 3 V, IDS = 10 mA
Gate to Source Leakage Current at VGS = -5 V
Thermal Resistance (Channel to Case)
UNITS
dB
dB
dB
dB
dBm
mA
V
mS
µA
°C/W
NE71300
00 (CHIP)
MIN
TYP
0.6
1.6
11.5
14.0
8.5
9.5
14.5
20
40
-3.5
-1.1
20
50
1.0
MAX
0.7
1.8
120
-0.5
10
190
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer; wafer rejection criteria for standard devices is 2 rejects for 10
samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories