NE713 Datasheet, PDF (1/16 Pages) NEC – L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

DATA SHEET
GaAs MES FET
NE713
L to Ku BAND LOW NOISE AMPLIFIER
N-CHANNEL GaAs MES FET
FEATURES
x Low noise figure
NF = 0.6 dB TYP. at f = 4 GHz
x High associated gain
Ga = 14 dB TYP. at f = 4 GHz
x Gate width: Wg = 280 Pm
x Gate Length: Lg = 0.3 Pm
ORDERING INFORMATION
PART NUMBER
NE71300-N
NE71300-M
NE71300-L
NE71383B
I DSS (mA)
20 to 50
50 to 80
80 to 120
20 to 120
PACKAGE CODE
00 (CHIP)
83B
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDS
5.0
V
Gate to Source Voltage
VGSO
ð5.0
V
Gate to Drain Voltage
VGDO
ð6.0
V
Drain Current
ID
IDSS
mA
Total Power Dissipation
Ptot
270
mW
400
mW
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
ð65 to +175 °C
RECOMMENDED OPERATING CONDITION (TA = 25 °C)
[NE71383B]
[NE71300]
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
VDS
ID
Pin
MIN.
TYP.
3
10
MAX.
4
30
15
Unit
V
mA
dBm
Document No. P11691EJ2V0DS00 (2nd edition)
Date Published February 1997 N
Printed in Japan
©
1996