NE69039 Datasheet, PDF (1/2 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR

PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR NE69039
FEATURES
• OUTPUT POWER AT 1dB COMPRESSION POINT:
27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB,
Duty 1/8
• 4 PIN MINI MOLD PACKAGE: NE69039
DESCRIPTION
The NE69039 is a low voltage, NPN Silicon Bipolar Transistor
for pulsed power applications. The device is designed to op-
erate from a 3.6 V supply, and deliver over 1/2 watt of power
output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These
characteristics make it an ideal device for TX output stage in a
1.9 GHZ digital cordless telephone (DECT or PHS). The part
is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package
and is available on tape and reel.
The NE69039 transistors are manufactured to NEC's stringent
quality assurance standards to ensure highest reliability and
consistent superior performance.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 39
+0.2
2.8 -0.3
+0.2
1.5 _-0.1
+0.10
0.4 -0.05
(LEADS 2, 3, 4)
2.9 ± 0.2 0.95
2
0.85
3
1.9
1
+0.10
0.6 _-0.05
1.1+-00..21 _0.8
4
1) Collector
2) Emitter
3) Base
4) Emitter
0.16
+0.10
-0.06
5˚
5˚
0 to 0.1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
SYMBOLS
ICBO
IEBO
hFE
P-1
GP
η_C
TON
PART NUMBER
PACKAGE CODE
PARAMETERS
Collector Cutoff Current, VCB = 5 V, IE = 0
Emitter Cutoff Current, VEB = 1 V, IC = 0
DC Current Gain, VCE = 3.6 V, IC = 100 mA
Output Power
Power Gain
Collector Efficiency
VCE = 3.6 V, f = 1.9 GHZ
ICq = 1 mA (Class AB)
Duty 1/8
Maximum Device On Time
UNITS
µA
µA
dBm
dB
%
MS
NE69039
39
MIN
TYP
MAX
2.5
2.5
30
27.5
5.0
6.0
50
72
10.0
California Eastern Laboratories