NE688M03 Datasheet, PDF (1/3 Pages) NEC – NPN SILICON TRANSISTOR

PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE688M03
FEATURES
• NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 9.5 GHz
• LOW NOISE FIGURE:
NF = 1.7 dB at 2 GHz
• HIGH COLLECTOR CURRENT:
ICMAX = 100 mA
DESCRIPTION
The NE688M03 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M03" package
is ideal for today's portable wireless applications. The NE688
is also available in chip and six different low cost plastic surface
mount package styles.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
1.2±0.05
0.8±0.1
2
1.4 ±0.1 0.45
(0.9)
0.45
1
0.2±0.1
0.3±0.1
3
0.59±0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0.15-+00.0.15
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
fT
NF
|S21E|²
hFE2
ICBO
IEBO
CRE3
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz
VCE = 3 V, IC = 20 mA, f = 2 GHz
Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz
VCE = 3 V, IC = 7 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz
VCE = 3 V, IC = 20 mA, f = 2 GHz
Forward Current Gain at VCE = 1 V, IC = 3 mA
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz
UNITS
GHz
GHz
dB
dB
dB
dB
µA
µA
pF
NE688M03
2SC5437
M03
MIN
TYP
MAX
4
5
9.5
1.9
2.5
1.7
3
4
8
80
145
0.1
0.1
0.7
0.8
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories