NE688 Datasheet, PDF (1/19 Pages) NEC – SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

SURFACE MOUNT NPN SILICON NE688
HIGH FREQUENCY TRANSISTOR SERIES
FEATURES
• LOW PHASE NOISE DISTORTION
• LOW NOISE: 1.5 dB at 2.0 GHz
• LOW VOLTAGE OPERATION
• LARGE ABSOLUTE MAXIMUM COLLECTOR
CURRENT: IC MAX = 100 mA
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
• ALSO AVAILABLE IN CHIP FORM
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
DESCRIPTION
b ^{e r s The NE688 series of NPN epitaxial silicon transistors are}
designed for low cost amplifier and oscillator applications. Low
P ^{L E A S E N O T E : p a r t n u m n o t noise figures, high gain and high current capability equate to}
wide dynamic range and excellent linearity. NE688's low
T ^{h e f o l l o wdi nagt a s h e e t a r ed e s i g n . phase noise distortion and high fT make it an excellent choice}
for oscillator applications up to 5 GHz. The NE688 series is
available in six different low cost plastic surface mount pack-
t ^{h i s f o r n e w age styles, and in chip form.}
f ^{r o m e n d e d o f f i c e f o r ELECTRICAL CHARACTERISTICS (TA = 25°C)}
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
r ^{e c o m mc a l l s a l e s PART NUMBER1}
EIAJ² REGISTERED NUMBER
PACKAGE OUTLINE
NE68818
2SC5194
18
NE68819
2SC5195
19
NE68830
2SC5193
30
NE68833
2SC5191
33
NE68839/39R
2SC5192/92R
39
P ^{l e a s e SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX}
fT
d ^{e t a i l s : fT}
N ^{E 6 8 8 1 8 NFMIN}
N ^{E 6 8 8 3 9 NFMIN}
N ^{E 6 8 8 3 9 R |S21E|2}
|S21E|²
hFE
Gain Bandwidth Product at
VCE = 1V, IC = 3 mA, f = 2.0 GHz
Gain Bandwidth Product at
VCE = 3V, IC = 20 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 3 V, IC = 7 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 1V, IC = 3 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 3V, IC = 20 mA, f = 2.0 GHz
Forward Current Gain³ at
GHz 4 5
4.5 5
4 4.5
4 4.5
4 4.5
GHz
10
9.5
9
8.5
9
dB
1.7 2.5
1.7 2.5
1.7 2.5
1.7 2.5
1.7 2.5
dB
1.5
1.5
1.5
1.5
1.5
dB 3.0 4.0
3.0 4.0
2.5 3.5
2.5 3.5
4.0 4.5
dB
8.5
8
6.5
6.5
9
VCE = 1 V, IC = 3 mA
80
160 80
160 80
160 80
160 80
160
ICBO
Collector Cutoff Current
at VCB = 5 V, IE = 0 mA
nA
100
100
100
100
100
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
nA
100
100
100
100
100
CRE4 Feedback Capacitance at
VCB = 1 V, IE = 0 mA, f = 1 MHz
pF
0.65 0.8
0.7 0.8
0.75 0.85
0.75 0.85
0.65 0.8
PT
Total Power Dissipation
mW
150
125
150
200
200
RTH(J-A) Thermal Resistance
(Junction to Ambient)
°C/W
833
1000
833
625
625
RTH(J-C) Thermal Resistance(Junction to Case) °C/W
Notes:
3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.
1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 4. The emitter terminal should be connected to the ground terminal of
2. Electronic Industrial Association of Japan.
the 3 terminal capacitance bridge.
California Eastern Laboratories