NE687 Datasheet, PDF (1/21 Pages) NEC – SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

SURFACE MOUNT NPN SILICON NE687
HIGH FREQUENCY TRANSISTOR SERIES
FEATURES
• LOW NOISE: 1.3 dB AT 2.0 GHz
• LOW VOLTAGE OPERATION
• EASY TO MATCH
• HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
b ^{e r s DESCRIPTION}
P ^{L E A S E N O T E : p a r t n u m n o t The NE687 series of NPN epitaxial silicon transistors are}
designed for low cost, low noise applications. Excellent perfor-
T ^{h e f o l l o wdi nagt a s h e e t a r ed e s i g n . mance at low voltage/low current makes this series an ideal}
choice for portable wireless applications at 1.6, 1.9 and 2.4
GHz. The NE687 die is available in six different low cost plastic
t ^{h i s f o r n e w f o r surface mount package styles.}
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
f ^{r o m e n d e d o f f i c e 39 (SOT 143 STYLE)}
39R (SOT 143R STYLE)
r ^{e c o m m c a l l s a l e s ELECTRICAL CHARACTERISTICS (TA = 25°C)}
PART NUMBER¹
EIAJ² REGISTERED NUMBER
P ^{l e a s e PACKAGE OUTLINE}
NE68718
2SC5185
18
NE68719
2SC5186
19
NE68730
2SC5184
30
NE68733
2SC5182
33
NE68739/39R
2SC5183/83R
39/39R
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
d ^{e t a i l s : fT}
N ^{E 6 8 7 3 0 fT}
NFMIN
N ^{E 6 8 7 3 3 NFMIN}
N ^{E 6 8 7 3 9 |S21e|2}
N ^{E 6 8 7 3 9 R |S21e|2}
hFE
Gain Bandwidth Product at
VCE = 2 V, IC = 20 mA, f = 2.0 GHz
Gain Bandwidth Product at
VCE = 1 V, IC = 10 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 2 V, IC = 3 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 2V, IC =20 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 1V, IC =10 mA, f = 2.0 GHz
Forward Current Gain³ at
VCE = 2 V, IC = 20 mA
GHz 10 13
9 11
9 11
9 12
7.5 10
GHz 8 11
79
79
7 10
7 8.5
dB
1.3 2.0
1.3 2.0
1.3 2.0
1.3 2.0
1.3 2.0
dB
1.3 2.0
1.3 2.0
1.3 2.0
1.3 2.0
1.3 2.0
dB 8 11
8.5 10
7 8.5
7 8.5
7.5 10
dB 7.5 9
6 7.5
6 7.5
6 7.5
7 8.5
70
140 70
140 70
140 70
140 70
140
ICBO Collector Cutoff Current
at VCB = 5 V, IE = 0 mA
nA
100
100
100
100
100
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
nA
100
100
100
100
100
CRE4 Feedback Capacitance at
VCB = 2 V, IE = 0 mA, f = 1 MHz
pF
0.3 0.6
0.4 0.8
0.4 0.8
0.4 0.8
0.4 0.8
PT
Total Power Dissipation
mW
90
90
90
90
90
RTH(J-A) Thermal Resistance
(Junction to Ambient)
°C/W
833
1250
833
625
625
RTH(J-C) Thermal Resistance
(Junction to Case)
°C/W
Notes:
3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.
1. Precaution: Devices are ESD sensitive. Use proper handling procedures. _{4. The emitter terminal should be connected to the ground terminal}
2. Electronic Industrial Association of Japan.
of the 3 terminal capacitance bridge.
California Eastern Laboratories