NE685M03 Datasheet, PDF (1/3 Pages) NEC – NPN SILICON TRANSISTOR

PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE685M03
FEATURES
• NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 12 GHz
• LOW NOISE FIGURE:
NF = 1.5 dB at 2 GHz
DESCRIPTION
The NE685M03 transistor is designed for low noise, high gain,
and low cost requirements. This high fT part is well suited for
very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M03" package is ideal for today's
portable wireless applications. The NE685 is also available in
six different low cost plastic surface mount package styles.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
1.2±0.05
0.8±0.1
2
1.4 ±0.1 0.45
(0.9)
0.45
1
0.2±0.1
0.3±0.1
3
0.59±0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0.15-+00.0.15
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
NE685M03
2SC5435
M03
SYMBOLS
fT
NF
|S21E|²
hFE2
ICBO
IEBO
CRE3
PARAMETERS AND CONDITIONS
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
Forward Current Gain at VCE = 3 V, IC = 10 mA
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
UNITS
MIN
TYP
MAX
GHz
12
dB
1.5
2.5
dB
7
9
75
140
µA
0.1
µA
0.1
pF
0.4
0.7
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories