NE685 Datasheet, PDF (1/17 Pages) NEC – SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

SURFACE MOUNT NPN SILICON NE685
HIGH FREQUENCY TRANSISTOR SERIES
FEATURES
• LOW COST
• SMALL AND ULTRA SMALL SIZE PACKAGES
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz
• NOISE FIGURES OF 1.5 dB AT 2.0 GHZ
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
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NEC's family of high frequency, low cost, surface mount
t ^{h i s f o r n e w f o r devices are well suited for portable wireless communications}
and cellular radio applications.
f ^{r o m e n d e d o f f i c e The NE685 series of high fT (12 GHz) devices is suitable for}
r ^{e c o m m c a l l s a l e s very low voltage/low current, low noise applications. These}
products are ideal for applications up to 2.4 GHz where low
cost, high gain, low voltage, and low current are prime con-
cerns.
Pdleetaasiel _s : _{ELECTRICAL CHARACTERISTICS (TA = 25°C)}
N ^{E 6 8 5 3 9 R PART NUMBER1}
EIAJ² REGISTERED NUMBER
PACKAGE OUTLINE
NE68518
2SC5015
18
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
NE68519
2SC5010
19
NE68530
2SC4959
30
NE68533
2SC4955
33
NE68539/39R
2SC4957
39
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT
NFMIN
GNF
MAG
|S21E|²
hFE
ICBO
IEBO
CRE4
Gain Bandwidth Product at
VCE = 3V, IC = 10 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 3 V, IC = 3 mA, f = 2.0 GHz
Associated Gain at
VCE = 3V, IC = 3 mA, f = 2.0 GHz
Maximum Available Gain at
VCE = 3 V, IC = 10 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 3V, IC =10 mA, f = 2.0 GHz
Forward Current Gain³ at
VCE = 3 V, IC = 10 mA
Collector Cutoff Current
at VCB = 5 V, IE = 0 mA
Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
Feedback Capacitance at
VCB = 3 V, IE = 0 mA, f = 1 MHz
GHz
12
12
12
12
12
dB
1.5 2.5
1.5 2.5
1.5 2.5
1.5 2.5
1.5 2.5
dB
8.5
7.5
7
7
7.5
dB
12
11
10
10.5
11
dB 9 11
79
7 8.5
78
9 10
75 110 150 75 110 150 75 110 150 75 110 150 75 110 150
µA
0.1
0.1
0.1
0.1
0.1
µA
0.1
0.1
0.1
0.1
0.1
pF
0.3 0.5
0.4 0.7
0.4 0.7
0.4 0.7
0.3 0.5
PT
Total Power Dissipation
mW
150
125
150
180
180
RTH(J-A) Thermal Resistance
(Junction to Ambient)
°C/W
833
1000
833
620
620
RTH(J-C) Thermal Resistance(Junction to Case) °C/W
200
200
200
200
200
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW≤350 µs, duty cycle ≤2%.
4. The emitter terminal should be connected to the ground terminal
of the 3 terminal capacitance bridge.
California Eastern Laboratories