NE681 Datasheet, PDF (1/20 Pages) NEC – NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NPN SILICON HIGH NE681
FREQUENCY TRANSISTOR SERIES
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz
• LOW NOISE FIGURE:
1.2 dB at 1 GHz
1.6 dB at 2 GHz
b e r s • HIGH ASSOCIATED GAIN:
15 dB at 1 GHz
P ^{L E A S E N O T E : p a r t n u m 12 dB at 2 GHz}
n ^{o t} • LOW COST
E
B
00 (CHIP)
35 (MICRO-X)
The ^{fotlhloiswdinagtasfhoerent eawredefsoirgn. DESCRIPTION}
f ^{r o m e n d e d o f f i c e NEC's NE681 series of NPN epitaxial silicon transistors are}
designed for low noise, high gain, low cost amplifier applica-
r ^{e c o m m c a l l s a l e s tions. Both the chip and micro-x versions are suitable for}
amplifier applications up to 4 GHz. The NE681 die is also
available in six different low cost plastic surface mount pack-
age styles. NE681's unique device characteristics allow you to
P ^{l e a s e use a single matching point to simultaneously achieve both low}
dNeEt ^{a6 i8l1s} _3: ^{5 noise and high gain.}
18 (SOT 343 STYLE)
19 (3 PIN ULTRA
SUPER MINI MOLD)
NOISE FIGURE, GAIN MSG
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
AND MAG vs. FREQUENCY
VCE = 3 V, IC = 5 mA
MSG
20
3.0
MAG
10
2.0
0
GA
NF
1.0
0.5
1.0
2.0 3.0
Frequency, f (GHz)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)