NE680M03 Datasheet, PDF (1/3 Pages) NEC – NPN SILICON TRANSISTOR

PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE680M03
FEATURES
• NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 8 GHz
• LOW NOISE FIGURE:
NF = 1.9 dB at 2 GHz
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
1.2±0.05
0.8±0.1
2
1.4 ±0.1 0.45
(0.9)
0.45
1
0.2±0.1
0.3±0.1
3
DESCRIPTION
The NE680M03 transistor is designed for low noise, high gain,
and low cost applications. This high fT part is ideal for low
voltage/low current applications. NEC's new low profile/flat
lead style "M03" package is ideal for today's portable wireless
applications. The NE680 is also available in chip, Micro-x, and
six different low cost plastic surface mount package styles.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
0.59±0.05
0.15-+0.00.51
Note:
1. This dimension was changed
effective 04/2000 from 1.4 mm
to 1.2 mm. Products with "04" or
a higher number indicated for
month of manufacture in lot
numbers have the new dimension.
Example of Lot No. Identification
0 6 xxxxxxx
In-company control code
Month of manufacture
(Example: Jan. = 1, Feb. = 2, etc.
Oct. = X, Nov. = Y, Dec. = Z)
Year of manufacture
(Last digit of year, 2000 = 0)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
NE680M03
2SC5434
M03
SYMBOLS
fT
NF
|S21E|²
hFE2
ICBO
IEBO
CRE3
PARAMETERS AND CONDITIONS
Gain Bandwidth at VCE = 3 V, IC = 5 mA, f = 2 GHz
Noise Figure at VCE = 3 V, IC = 6 mA, f = 2 GHz
Insertion Power Gain at VCE = 3 V, IC = 5 mA, f = 2 GHz
Forward Current Gain at VCE = 3 V, IC = 5 mA
Collector Cutoff Current at VCB = 10 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
UNITS
MIN
TYP
MAX
GHz
5.5
8.0
dB
1.9
3.2
dB
5.5
7.5
80
145
µA
1.0
µA
1.0
pF
0.3
0.7
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories