NE664M04 Datasheet, PDF (1/9 Pages) NEC – MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's
MEDIUM POWER NPN NE664M04
SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH:
fT = 20 GHz
• HIGH OUTPUT POWER:
P-1dB = 26 dBm at 1.8 GHz
• HIGH LINEAR GAIN:
GL = 12 dB at 1.8 GHz
• LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
2.05±0.1
1.25±0.1
DESCRIPTION
NEC's NE664M04 is fabricated using NEC's state-of-the-art
UHS0 25 GHz fT wafer process. With a transition frequency of
20 GHz, the NE664M04 is usable in applications from 100 MHz
to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even
with low voltage and low current, making this device an
excellent choice for the output or driver stage for mobile or fixed
wireless applications.
+0.30^{+-00..0051(leads 1, 3 and ,4)}
The NE664M04 is housed in NEC's low profile/flat lead style
"M04" package
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
EIAJ³ REGISTRATION NUMBER
PIN CONNECTIONS
1. Emitter 3. Emitter
2. Collector 4. Base
NE664M04
M04
2SC5754
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
1000
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
1000
hFE
DC Current¹ Gain at VCE = 3 V, IC = 100 mA
40
60
100
P1dB
Output Power at 1 dB compression point at VCE = 3.6 V, ICQ = 4 mA, dBm
26.0
f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty Cycle
GL
Linear Gain at VCE = 3.6 V, ICQ = 20 mA, f = 1.8 GHz, Pin = 0 dBm,
dB
1/2 Duty Cycle
12.0
MAG
Maximum Available Power Gain⁴ at VCE = 3 V, IC = 100 mA, f = 2 GHz dBm
12.0
|S21E|² Insertion Power Gain at VCE = 3 V, IC = 100 mA, f = 2 GHz
dB
5.0
6.5
ηc
Collector Efficiency, 3.6 V, ICQ = 4 mA, f = 1.8 GHz, Pin = 15 dBm,
%
60
1/2 Duty Cycle
fT
Gain Bandwidth at VCE = 3 V, IC = 100 mA, f = 0.5 GHz
GHz
16
20
Cre
Feedback Capacitance² at VCB = 3 V, IC = 0, f = 1 MHz
pF
1.0
1.5
Notes:
1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan
4. MAG = |S21| (K - K 2 - 1 ).
|S12|
California Eastern Laboratories