NE662M16 Datasheet, PDF (1/9 Pages) NEC – NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN SILICON HIGH
FREQUENCY TRANSISTOR
NE662M16
FEATURES
• HIGH GAIN BANDWIDTH: fT = 25 GHz
• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
• HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz
• NEW LOW PROFILE M16 PACKAGE:
• Flat Lead Style with a height of just 0.50mm
DESCRIPTION
The NE662M16 is fabricated using NEC's UHS0 25 GHz fT
wafer process. With a typical transition frequency of 25 GHz
M16
the NE662M16 is usable in applications from 100 MHz to over
10 GHz. The NE662M16 provides excellent low voltage/low
current performance.
NEC's new low profile/flat lead style "M16" package is ideal for
today's portable wireless applications. The NE662M16 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
ICBO
IEBO
hFE
fT
MSG
|S21E|²
NF
P1dB
IP3
Cre
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Forward Current Gain² at VCE = 2 V, IC = 5 mA
Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz
Maximum Stable Gain⁴ at VCE = 2 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT
Output Power at 1 dB compression point at
VCE = 2 V, IC = 20 mA, f = 2 GHz
Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz
Feedback Capacitance³ at VCB = 2 V, IC = 0, f = 1 MHz
UNITS
nA
nA
GHz
dB
dB
dB
dBm
pF
NE662M16
2SC5704
M16
MIN
TYP
MAX
200
200
50
70
100
20
25
20
14
17
1.1
1.5
11
22
0.14
0.24
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MSG = ^S21
S12