NE650R479A Datasheet, PDF (1/8 Pages) NEC – 0.4 W L, S-BAND POWER GaAs MES FET

PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE650R479A
0.4 W L, S-BAND POWER GaAs MES FET
DESCRIPTION
The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile
communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high
linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• High Output Power
: PO (1 dB) = +26 dBm typ.
• High Linear Gain
: 14 dB typ.
• High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 100 mA, f = 1.9 GHz
ORDERING INFORMATION (PLAN)
Part Number
NE650R479A-T1 79A
Package
Supplying Form
12 mm tape width, 1 kpcs/reel
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE650R479A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
–7
V
Drain Current
ID
0.6
A
Gate Forward Current
IGF
12
mA
Gate Reverse Current
IGR
12
mA
Total Power Dissipation
PT
2.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–65 to +150
°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice.
Document No. P13671EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
©
Printed in Japan
1998