NE6501077 Datasheet, PDF (1/6 Pages) NEC – 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

PRELIMINARY DATA SHEET
GaAs MES FET
NE6501077
10 W L, S-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NE6501077 is power GaAs FET which provides
high gain, high efficiency and high output power in L, S
band.
To reduce thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
PACKAGE DIMENSIONS (UNIT: mm)
17.5 ±0.5
14.3
1.0 ±0.1
GATE
SOURCE
FEATURES
• Class A operation
• High output power: 39.5 dBm (typ)
• High gain: 10.5 dB (typ)
• High power added efficiency: 40 % (typ)
• Hermetically sealed ceramic package
2.5
R1.25, 2 PLACES
DRAIN
0.1^{+–00..0026}
8.9 ±0.4
2.26 ±0.4
0.2 MAX.
6.35 ±0.4
4.0 MIN BOTH
LEADS
3.8 MAX.
1.0
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSX
15
V
Gate to Drain Voltage
VGDX
–18
V
Gate to Source Voltage
VGSX
–12
V
Drain Current
ID
9.0
A
Gate Current
IG
50
mA
Total Power Dissipation
PT(*)
50
W
Channel Temperature
Tch
175
˚C
Storage Temperature
Tstg
–65 to +175
˚C
Temperature Cycling
T∞
–40 to +120
˚C
* TC = 25 ˚C
Caution Please handle this device at a static-free workstation, because this is an electrostatic sensitive
device.
Document No. P10978EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996