NE6500496 Datasheet, PDF (1/6 Pages) NEC – 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

PRELIMINARY DATA SHEET
GaAs MES FET
NE6500496
4 W L, S-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NE6500496 is power GaAs FET which provides high
gain, high efficiency and high output power in L, S band.
To reduce thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
PACKAGE DIMENSION (UNIT: mm)
4.0 MIN BOTHLEADS
SOURCE
1.0 ± 0.1
GATE _{φ 2.2 ±0.3}
2 SLACES
FEATURES
• Class A operation
• High output power: 36 dBm (typ)
• High gain: 11.5 dB (typ)
• High power added efficiency: 45 % (typ)
• Hermetically sealed ceramic package
4.3 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSX
15
Gate to Drain Voltage
VGDX
–18
Gate to Source Voltage VGSX
–12
Drain Current
ID
4.5
Gate Current
IG
25
Total Power Dissipation PT(*)
25
Channel Temperature
Tch
175
Storage Temperature
Tstg –65 to +175
Temperature Cycling
T∞ –40 to +120
* TC = 25 ˚C
0.1
V ^{0.2 MAX.}
V
1.7 ±0.15
V
A
mA
W
˚C
˚C
˚C
DRAIN
0.6 ±0.1
5.2 ±0.3
11.0 ±0.3
15.0 ±0.3
6.0 ±0.2
4.0
5.0 MAX.
1.2
Caution Please handle this device at a static-free workstation, because this is an electrostatic sensitive
device.
Document No. P10971EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996