NE6500379A Datasheet, PDF (1/8 Pages) NEC – 3W L, S-BAND POWER GaAs MESFET

DATA SHEET
N-CHANNEL GaAs MES FET
NE6500379A
3W L, S-BAND POWER GaAs MESFET
DESCRIPTION
The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile
communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high
linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s
stringent quality and control procedures.
FEATURES
• High Output Power
: Po (1dB) = +35 dBm typ.
• High Linear Gain
: 10 dB typ.
• High Power Added Efficiency: 50% typ. @VDS = 6 V, IDset = 500 mA, f = 1.9 GHz
ORDERING INFORMATION
Part Number
Package
NE6500379A-T1 79A
Supplying Form
12 mm tape width, 1 kpcs/reel
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE6500379A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
–7
V
Drain Current
ID
5.6
A
Gate Current
IG
50
mA
Total Power Dissipation
PT
21
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–65 to +150
°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice.
Document No. P13495EJ2V0DS00 (2nd edition)
The mark shows major revised points.
Date Published August 1998 N CP(K)
©
Printed in Japan
1998