NE58219 Datasheet, PDF (1/7 Pages) NEC – NECs NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

NEC's NPN SILICON EPITAXIAL
TRANSISTOR 3 PINS ULTRA NE58219
SUPER MINI MOLD
FEATURES
• HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz
• LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz
• ULTRA SUPER MINI MOLD PACKAGE: 1.6 x 0.8 mm
DESCRIPTION
NEC's NE58219 is a low supply voltage transistor designed for
UHF Mixer and oscillator applications. The 3 pin ultra super
mini mold package makes this device ideally suited for high
density surface mount assembly.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 19
1.6±0.1
0.8±0.1
2
3
1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
ICBO
IEBO
VCE(sat)
hFE
fT
CRE
|S21E|²
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCB = 15 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Collector Saturation Voltage at hFE = 10, IC = 5 mA
DC Current Gain at VCE = 5 V, IC = 5 mA²
Gain Bandwidth at VCE = 5 V, IC = 5 mA
Feedback Capacitance at VCB = 5 V, IE = 0, f = 1 MHz³
Insertion Power Gain at VCE = 5 V, IC = 5 mA, f = 1 GHz
UNITS
µA
µA
V
GHz
pF
dB
NE58219
2SC5004
19
MIN
TYP
60
3.0
5.0
0.9
5.0
Notes:
1. Electronic Industrial Association of Japan
2. Pulsed measurement, pulse width ≤ 350 µs, Duty Cycle ≤ 2 %.
3. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
MAX
0.1
0.1
0.5
120
1.2
California Eastern Laboratories