NE552R679A Datasheet, PDF (1/9 Pages) NEC – 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

DATA SHEET
SILICON POWER MOS FET
NE552R679A
3.0 V OPERATION SILICON RF POWER LD-MOS FET
FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using our NEWMOS2
technology (our WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. This device can
deliver 28.0 dBm output power with 60% power added efficiency at 460 MHz under the 3.0 V supply voltage.
FEATURES
• High output power
: Pout = 28.0 dBm TYP. (VDS = 3.0 V, IDset = 300 mA, f = 460 MHz, Pin = 15 dBm)
• High power added efficiency : ηadd = 60% TYP. (VDS = 3.0 V, IDset = 300 mA, f = 460 MHz, Pin = 15 dBm)
• High linear gain
: GL = 20 dB TYP. (VDS = 3.0 V, IDset = 300 mA, f = 460 MHz, Pin = 5 dBm)
• Surface mount package
: 5.7 × 5.7 × 1.1 mm MAX.
• Single supply
: VDS = 2.8 to 6.0 V
APPLICATIONS
• Family Radio Service
: 3.0 V Handsets
ORDERING INFORMATION
Part Number
NE552R679A-T1
NE552R679A-T1A
Package
79A
Marking
AU
Supplying Form
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE552R679A
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10125EJ01V1DS (1st edition)
Date Published April 2002 CP(K)
Printed in Japan
 NEC Compound Semiconductor Devices 2001, 2002