NE52118 Datasheet, PDF (1/12 Pages) NEC – L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

PRELIMINARY DATA SHEET
GaAs HETEROJUNCTION BIPOLAR TRANSISTOR
NE52118
L to S BAND LOW NOISE AMPLIFIER
NPN GaAs HBT
FEATURES
• For Low Noise & High Gain amplifiers
NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω)
OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω)
• 4-pin super minimold package
• Grounded Emitter Transistor
ORDERING INFORMATION (PLAN)
Part Number
NE52118-T1
Package
4-pin super minimold
Marking
V41
Supplying Form
Embossed tape 8 mm wide.
Pin 3, pin 4 face to perforation side of the tape.
Qty 3 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE52118)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Emitter Voltage
VCEO
5.0
V
Collector to Base Voltage
VCBO
3.0
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
7
mA
Base Current
IB
0.3
mA
Total Power Dissipation
Ptot
30
mW
Junction Temperature
Tj
+125
°C
Storage Temperature
Tstg
–65 to +125
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14544EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1999