NE434S01_98 Datasheet, PDF (1/5 Pages) NEC – C BAND SUPER LOW NOISE HJ FET

PRELIMINARY DATA SHEET
C BAND SUPER LOW NOISE HJ FET NE434S01
FEATURES
• VERY LOW NOISE FIGURE:
0.35 dB TYP at 4 GHz
• HIGH ASSOCIATED GAIN:
15.5 dB TYP at 4 GHz
• GATE WIDTH: 280 µm
• TAPE & REEL PACKAGING OPTION AVAILABLE
• LOW COST PLASTIC PACKAGE
DESCRIPTION
The NE434S01 is a Hetero-Junction FET that uses the junction
between Si-doped AlGaAs and undoped InGaAs to create very
high mobility electrons. Its excellent low noise and high asso-
ciated gain make it suitable for TVRO and other commercial
systems.
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
VDS = 2 V
ID = 10 mA
20
MSG.
16
|S21S|²
12
MAG.
8
4
1
2
4 6 8 10 14 20 30
Frequency, f (GHz)
RECOMMENDED
OPERATING CONDITIONS (TA = 25°C)
SYMBOLS
VDS
ID
PIN
CHARACTERISTIC UNITS MIN TYP MAX
Drain to Source Voltage V
2 2.5
Drain Current
mA
15 20
Input Power
dBM
0
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
NE434S01
S01
SYMBOLS
IGSO
IDSS
PARAMETERS AND CONDITIONS
Gate to Source Leak Current, VGS = -3.0 V
Saturated Drain Current, VDS = 2.0 V, VGS = 0 V
UNITS
MIN
µA
mA
20
TYP
MAX
0.5
10
80
150
VGS(off)
Gate to Source Cutoff Voltage, VDS = 2.0 V, ID = 100 µA,
V
-0.2
-0.9
-2.5
gm
Transconductance, VDS = 2.0 V, ID = 14 mA
NF¹
Noise Figure, VDS = 2.0 V, ID = 15 mA, f = 4 GHz
GA1
Associated Gain, VDS = 2.0 V, ID = 15 mA, f = 4 GHz
mS
70
85
dB
0.35
0.45
dB
13.0
15.5
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production
line as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories