NE434S01 Datasheet, PDF (1/12 Pages) NEC – C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE434S01
C BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE434S01 is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for TVRO
and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP., Ga = 15.5 dB TYP. at f = 4 GHz
• Gate Width: Wg = 280 Pm
ORDERING INFORMATION
PART NUMBER
NE434S01-T1
NE434S01-T1B
SUPPLYING FORM
Tape & reel 1000 pcs./reel
Tape & reel 4000 pcs./reel
MARKING
E
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
–3.0
V
Drain Current
ID
IDSS
mA
Total Power Dissipation
Ptot
300
mW
Channel Temperature
Tch
125
qC
Storage Temperature
Tstg –65 to +125 qC
RECOMMENDED OPERATING CONDITION (TA = 25 °C)
PACKAGE DIMENSIONS
(Unit: mm)
2.0 ± 0.2
1
2.0 _{± 0.2}
E 2
4
3
0.65 TYP.
1.9 ± 0.2
1.6
0.125 ± 0.05
0.4 MAX.
4.0 ± 0.2
1. Source
2. Drain
3. Source
4. Gate
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
VDS
ID
Pin
MIN.
TYP.
2
15
MAX.
2.5
20
0
Unit
V
mA
dBm
Document No. P11344EJ3V0DS00 (3rd edition)
Date Published October 1996 P
Printed in Japan
©
1996