NE429M01 Datasheet, PDF (1/12 Pages) NEC – C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE429M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
• Super low noise figure & High associated gain
NF = 0.9 dB TYP., Ga = 10 dB TYP. @ f = 12 GHz
• 6-pin super minimold package
• Gate width: Wg = 200µm
ORDERING INFORMATION
Part Number
NE429M01-T1
Package
6-pin super minimold
Marking
V72
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation side of the tape
Qty 3 kpcs/reel
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
−3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
100
µA
Total Power Dissipation
Ptot
125
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
−65 to +125
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12254EJ3V0DS00 (3rd edition)
The mark shows major revised points.
Date Published November 1999 N CP(K)
Printed in Japan
©
1997, 1999