NE4210S01 Datasheet, PDF (1/16 Pages) NEC – X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210S01
X to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz
• Gate Length: Lg ≤ 0.20 µm
• Gate Width : Wg = 160 µm
ORDERING INFORMATION (PLAN)
Part Number
Marking
NE4210S01-T1
L
NE4210S01-T1B
Supplying Form
Tape & reel 1 kp/reel
Tape & reel 4 kp/reel
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
NE4210S01)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
–3.0
V
Drain Current
Gate Current
ID
IDSS
mA
IG
100
µA
Total Power Dissipation
Ptot
165
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
–65 to +125
°C
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Parameter
Symbol MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
1
2
3
V
Drain Current
Input Power
ID
5
10
15
mA
Pin
–
–
0
dBm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14232EJ2V0DS00 (2nd edition)
The mark shows major revised points.
Date Published November 1999 N CP(K)
Printed in Japan
©
1999