NE4210M01 Datasheet, PDF (1/12 Pages) NEC – C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

PRELIMINARY DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.8 dB TYP., Ga = 11 dB TYP. at f = 12 GHz
• 6pin super minimold package
• Gate Width: Wg = 200µm
ORDERING INFORMATION
Part Number
NE4210M01-T1
Package
6-pin super minimold
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation
side of the tape
Marking
V73
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
−3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
100
µA
Total Power Dissipation
Ptot
Channel Temperature
Tch
125
mW
125
°C
Storage Temperature
Tstg
−65 to +125
°C
The information in this document is subject to change without notice.
Document No. P13682EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
©
1998