NE38018 Datasheet, PDF (1/16 Pages) NEC – L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET

PRELIMINARY DATA SHEET
Hetero Junction Field Effect transistor
NE38018
L to S BAND LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
FEATURES
Super Low noise figure & High Associated Gain
NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz
NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz
4 pins super mini mold package
Wg = 800 µm
ORDERING INFORMATION (PLAN)
Part Number
Quantity
Packing Style
NE38018-T1
3 kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Source), Pin4 (Drain) face to perforation side of the tape.
NE38018-T2
3 kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Source), Pin2 (Gate) face to perforation side of the tape.
Remark Please contact with responsible NEC person, if you require evaluation sample.
(Part number for sample order: NE38018)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
–3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
100
µA
Total Power Temperature
Ptot
150
mA
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
–65 to +125
°C
RECOMMENDED OPERATING CONDITIONS (TA = 25°C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
1
2
3
V
Drain Current
ID
2
5
30
mA
Input Power
Pin
–
–
0
dBm
The information in this document is subject to change without notice.
Document No. P13494EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
©
1998