NE334S01_00 Datasheet, PDF (1/6 Pages) NEC – C BAND SUPER LOW NOISE HJ FET

PRELIMINARY DATA SHEET
C BAND SUPER LOW NOISE HJ FET NE334S01
FEATURES
• VERY LOW NOISE FIGURE:
0.25 dB TYP at 4 GHz
• HIGH ASSOCIATED GAIN:
16.0 dB TYP at 4 GHz
• GATE WIDTH: 280 µm
• TAPE & REEL PACKAGING OPTION AVAILABLE
• LOW COST PLASTIC PACKAGE
DESCRIPTION
The NE334S01 is a Hetero-Junction FET that uses the junction
between Si-doped AlGaAs and undoped InGaAs to create very
high mobility electrons. Its excellent low noise and high asso-
ciated gain make it suitable for TVRO and other commercial
systems.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
VDS = 2 V
ID = 10 mA
20
MSG.
16
|S21S|²
12
MAG.
8
4
1
2
4 6 8 10 14 20 30
Frequency, f (GHz)
RECOMMENDED
OPERATING CONDITION (TA = 25°C)
SYMBOLS
VDS
ID
PIN
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
UNITS MIN TYP MAX
V
2 2.5
mA
15 20
dBm
0
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
UNITS
NE334S01
S01
MIN
TYP
MAX
NF¹
Noise Figure, VDS = 2.0 V, ID = 15 mA, f = 4 GHz
GA1
Associated Gain, VDS = 2.0 V, ID = 15 mA, f = 4 GHz
dB
0.25
0.35
dB
15.0
16.0
IDSS
Saturated Drain Current, VDS = 2.0 V, VGS = 0 V
mA
20
80
150
gm
Transconductance, VDS = 2.0 V, ID = 14 mA
mS
70
85
VGS(off)
Gate to Source Cutoff Voltage, VDS = 2.0 V, ID = 100 µA,
V
-0.2
-0.9
-2.5
IGSO
Gate to Source Leak Current, VGS = -3.0 V
µA
0.5
10
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production
line as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories