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NE32900 Datasheet, PDF (1/1 Pages) NEC – SCHEMATIC
NONLINEAR MODEL NE32900
SCHEMATIC
Q1
Lgx
GATE
0.35nH
Ldx
0.28nH
DRAIN
Lsx
0.025nH
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
Parameters
Q1
Parameters
Q1
VTO
-0.825
RG
7
VTOSC
0
RD
4
ALPHA
7
RS
4
BETA
0.148
RGMET
0
GAMMA
0.081
KF
0
GAMMADC
0.05
AF
1
Q
2.5
TNOM
27
DELTA
0.7
XTI
3
VBI
0.6
EG
1.43
IS
1e-14
VTOTC
0
N
1
BETATCE
0
RIS
0
FFE
1
RID
0
TAU
3e-12
CDS
0.095e-12
RDB
5000
CBS
1e-9
CGSO
0.42e-12
CGDO
0.023e-12
DELTA1
0.3
DELTA2
0.6
FC
0.5
VBR
Infinity
(1) Series IV Libra TOM Model
UNITS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
MODEL RANGE
Frequency: 0.5 to 26.5 GHz
Bias:
Date:
VDS = 1 V to 3 V, ID = 5 mA to 25 mA
IDSS = 54.3 mA @ VGS = 0, VDS = 2 V
1/98
California Eastern Laboratories
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RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
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DATA SUBJECT TO CHANGE WITHOUT NOTICE
PRINTED IN USA ON RECYCLED PAPER -8/98