NE32684A Datasheet, PDF (1/5 Pages) NEC – ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET
NOT RECOMMENDED FOR NEW DESIGN
NE32684A
FEATURES
• VERY LOW NOISE FIGURE:
0.5 dB typical at 12 GHz
• HIGH ASSOCIATED GAIN:
11.5 dB Typical at 12 GHz
• LG = 0.20 µm, WG = 200 µm
• LOW COST METAL CERAMIC PACKAGE
• TAPE & REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The NE32684A is a pseudomorphic Hetero-Junction FET that
uses the junction between Si-doped AlGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling capabilities. The
mushroom gate also results in lower noise figure and high
associated gain. This device is housed in an epoxy-sealed,
metal/ceramic package and is intended for high volume con-
sumer and industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
1.2
24
GA
1
21
0.8
18
0.6
15
0.4
NF
0.2
0
1
10
Frequency, f (GHz)
12
9
6
30
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
NE32684A
84AS
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF¹
Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz
dB
0.5
0.6
GA¹
Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz
dB
10.0
11.5
P1dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
dBm
dBm
8.5
10.75
G1dB
Gain at P1dB, f = 12 GHz, VDS = 2 V, IDS = 10 mA
dB
VDS = 2 V, IDS = 20 mA
dB
11.0
11.5
IDSS
Saturated Drain Current, VDS = 2 V,VGS = 0 V
mA
15
40
70
VP
Pinch-off Voltage, VDS = 2 V, IDS = 100 µA
V
-2.0
-0.8
-0.2
gm
Transconductance, VDS = 2 V, ID = 10 mA
mS
45
60
IGSO
Gate to Source Leakage Current, VGS = -3 V
µA
0.5
10.0
RTH (CH-A) Thermal Resistance (Channel to Ambient)
°C/W
750
RTH (CH-C) Thermal Resistance (Channel to Case)
°C/W
350
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not for each specimen.
California Eastern Laboratories