NE325S01 Datasheet, PDF (1/12 Pages) NEC – C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE325S01
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE325S01 is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS
and another commercial systems.
PACKAGE DIMENSIONS
(Unit: mm)
2.0 ±0.2
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
• Gate Length : Lg ≤ 0.20 µm
• Gate Width : Wg = 200 µm
2
ORDERING INFORMATION
PART NUMBER
NE325S01-T1
NE325S01-T1B
SUPPLYING FORM
Tape & reel 1000 pcs./reel
Tape & reel 4000 pcs./reel
MARKING
D
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDS
4.0
V
Gate to Source Voltage VGS
–3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
100
µA
Total Power Dissipation Ptot
165
mW
Channel Temperature
Tch
125
˚C
Storage Temperature
Tstg –65 to +125 ˚ C
0.125 ±0.05
1
D
3
0.65 TYP.
1.9 ±0.2
1.6
0.4MAX
4.0 ±0.2
4
1. Source
2. Drain
3. Source
4. Gate
RECOMMENDED OPERATING CONDITION (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
VDS
ID
Pin
MIN.
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
Document No. P11138EJ3V0DS00 (3rd edition)
Date Published October 1996 N
Printed in Japan
©
1996