NE32584C Datasheet, PDF (1/12 Pages) NEC – C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

D_DA_AT_TA_A S_SH_HE_EE_ET_T
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32584C
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE32584C is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
• Gate Length : Lg d 0.2 Pm
• Gate Width .. : Wg = 200 Pm
ORDERING INFORMATION
PART NUMBER
SUPPLYING
FORM
LEAD LENGTH
NE32584C-SL STICK
L = 1.7 mm MIN.
NE32584C-T1
Tape & reel L = 1.0 r 0.2 mm
1000 pcs./reel
NE32584C-T1A Tape & reel L = 1.0 r 0.2 mm
5000 pcs./reel
MARKING
D
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
1
L
L
D
2
4
L
L
3
0.5 TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
–3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
100
PA
Total Power Dissipation
Ptot
165
mW
Channel Temperature
Tch
150
qC
Storage Temperature
Tstg –65 to +150 qC
RECOMMENDED OPERATING CONDITION (TA = 25 qC)
1. Source
2. Drain
3. Source
4. Gate
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
VDS
ID
Pin
MIN.
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
Document No. P12275EJ2V0DS00 (2nd edition)
(Previous No. TC-2515)
Date Published February 1997 N
Printed in Japan
©
1994