NE32484A_98 Datasheet, PDF (1/5 Pages) NEC – ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

ULTRA LOW NOISE _NE32484A
PSEUDOMORPHIC HJ FET
FEATURES
• VERY LOW NOISE FIGURE:
0.6 dB typical at 12 GHz
• HIGH ASSOCIATED GAIN:
11 dB typical at 12 GHz
• LG = 0.25 µm, WG = 200 µm
• LOW COST METAL/CERAMIC PACKAGE
• TAPE & REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The NE32484A is a pseudomorphic Hetero-Junction FET that
uses the junction between Si-doped AlGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling capabilities. The
mushroom gate also results in lower noise figure and high
associated gain. This device is housed in an epoxy-sealed,
metal/ceramic package and is intended for high volume
consumer and industrial applications.
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
1.4
24
1.2
21
GA
1
18
0.8
15
NF
0.6
12
0.4
9
0.2
6
0
1
10
Frequency, f (GHz)
3
20 30
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
NFOPT¹
GA¹
P1dB
G1dB
IDSS
VP
gm
IGSO
RTH (CH-A)
RTH (CH-C)
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Noise Figure, VDS = 2.0 V, ID = 10 mA,
f = 12 GHz
Associated Gain, VDS = 2.0 V, ID = 10 mA, f = 12 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2.0 V, IDS = 10 mA
VDS = 2.0 V, IDS = 20 mA
Gain at P1dB, f = 12 GHz
VDS = 2.0 V, IDS = 10 mA
VDS = 2.0 V, IDS = 20 mA
Saturated Drain Current, VDS = 2.0 V, VGS = 0 V
Pinch-off Voltage, VDS = 2.0 V, IDS = 0.1 mA
Transconductance, VDS = 2.0 V, ID = 10 mA
Gate to Source Leakage Current, VGS = -3.0 V, ID = 0 mA
Thermal Resistance (Channel to Ambient)
Thermal Resistance (Channel to Case)
UNITS
dB
dB
dBm
dBm
dB
dB
mA
V
mS
µA
°C/W
°C/W
NE32484A
84AS
MIN
TYP
MAX
0.6
0.7
10.0
11.0
8.5
11.0
10.0
10.5
15
40
70
-2.0
-0.8
-0.2
45
60
0.5
10.0
750
350
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not for each specimen.
California Eastern Laboratories