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NE32400_98 Datasheet, PDF (1/5 Pages) NEC – ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET
NE32400
FEATURES
• VERY LOW NOISE FIGURE:
NF = 0.6 dB typical at f = 12 GHz
• HIGH ASSOCIATED GAIN:
GA = 11.0 dB typical at f = 12 GHz
• LG = 0.25 µm, WG = 200 µm
DESCRIPTION
The NE32400 is a pseudomorphic Hetero-Junction FET chip
that utilizes the junction between Si-doped AlGaAs and undoped
InGaAs to create a two-dimensional electron gas layer with
very high electron mobility. This device features mushroom
shaped TiAl gates for decreased gate resistance and im-
proved power handling capabilities. The mushroom gate re-
sults in lower noise figure and high associated gain for con-
sumer and industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
3
24
GA
2.5
21
2
18
1.5
15
1
0.5
NF
0
1
12
9
6
10
20 30
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
NFOPT1
GA1
P1dB
G1dB
IDSS
VP
gm
IGSO
RTH (CH-C)2
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Optimum Noise Figure at VDS = 2 V, IDS = 10 mA
f = 4 GHz
f = 12 GHz
Associated Gain at VDS = 2 V, IDS = 10 mA
f = 4 GHz
f = 12 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
Gain at P1dB, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
Saturated Drain Current at VDS = 2 V, VGS = 0 V
Pinch-Off Voltage at VDS = 2 V, IDS = 100 µA
Transconductance at VDS = 2 V, IDS = 10 mA
Gate to Source Leakage Current at VGS = -3 V
Thermal Resistance (Channel-to-Case)
UNITS
dB
dB
dB
dB
dBm
dBm
dB
dB
mA
V
mS
µA
°C/W
NE32400
00 (CHIP)
MIN
TYP
MAX
0.35
0.6
0.7
16.0
10.0
11.0
9.5
11.0
11.8
12.8
15
40
70
-2.0
-0.8
-0.2
45
60
0.5
10
260
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10
samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories