NE321000 Datasheet, PDF (1/12 Pages) NEC – C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

DATA SHEET
HETERO JUNCTION FIELDEFFECT TRANSISTOR
NE321000
C to Ka BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET CHIP
DESCRIPTION
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and
space applications.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
• Gate Length: Lg ≤ 0.20 µm
• Gate Width : Wg = 160 µm
ORDERING INFORMATION (PLAN)
Part Number
NE321000
Standard (Grade D)
Quality Grade
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
NE321000)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Ratings
Unit
VDS
4.0
V
VGS
–3.0
V
ID
IG
P ^Note
tot
IDSS
100
200
mA
µA
mW
Tch
175
°C
Tstg
–65 to +175
°C
Note Chip mounted on an Alumina heatsink (size: 3 × 3 × 0.6 t)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14270EJ2V0DS00 (2nd edition)
The mark shows major revised points.
Date Published November 1999 N CP(K)
Printed in Japan
©
1999