NE25339 Datasheet, PDF (1/6 Pages) NEC – GENERAL PURPOSE DUAL-GATE GaAs MESFET

GENERAL PURPOSE
DUAL-GATE GaAs MESFET
NE25339
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER AND
MIXER IN UHF APPLICATIONS
• LOW CRSS: 0.02 pF (TYP)
• HIGH GPS: 20 dB (TYP) AT 900 MHz
• LOW NF: 1.1 dB TYP AT 900 MHz
• LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 800 µm
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
DESCRIPTION
The NE253 is an 800 µm dual gate GaAs FET designed to
provide flexibility in its application as a mixer, AGC amplifier,
or low noise amplifier. As an example, by shorting the second
gate to the source, higher gain can be realized than with single
gate MESFETs. This device is available in a mini-mold (sur-
face mount) package.
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
VGS = 1 V, IDS = 10 mA, f = 900 MHz
20
GPS
10
10
5
NF
0
0
0
5
10
Drain to Source Voltage, VDS (V)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOL
NF
GPS
BVDSX
IDSS
VG1S (OFF)
VG2S (OFF)
IG1SS
IG2SS
|YFS|
CISS
CRSS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
Power Gain at VDS = 5 V, VG2S = 1 V, IDS = 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at VG1S = -4 V,
VG2S = 0, IDS = 20 µA
Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V
Gate 1 to Source Cutoff Voltage at VDS = 5 V,
VG2S = 0 V, ID = 100 µA
Gate 2 to Source Cutoff Voltage at VDS = 5 V,
VG1S = 0 V, ID = 100 µA
Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0
Gate 2 Reverse Current at VDS = 0. VG2S = -4V, VG1S = 0
Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V,
IDS = 10 mA, f = 1.0 kHz
Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V,
IDS = 10 mA, f = 1 MHz
UNITS
dB
dB
V
mA
V
V
µA
µA
mS
pF
pF
NE25339
39
MIN
TYP
MAX
1.1
2.5
16
20
10
10
40
80
-3.5
-3.5
10
10
25
35
1.0
1.5
2.0
0.02
0.035
California Eastern Laboratories