NE24283B Datasheet, PDF (1/4 Pages) NEC – ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)

ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET _NE24283B
(SPACE QUALIFIED)
FEATURES
• VERY LOW NOISE FIGURE:
0.6 dB TYP at 12 GHz
• HIGH ASSOCIATED GAIN:
11.0 dB TYP at 12 GHz
• GATE LENGTH: 0.25 µm
• GATE WIDTH: 200 µm
• HERMETIC METAL/CERAMIC PACKAGE
DESCRIPTION
The NE24283B is a pseudomorphic Hetero-Junction FET that
uses the junction between Si-doped AlGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling capabilities. The
mushroom gate also results in lower noise figure and high
associated gain. This device is housed in a solder sealed
hermetic, metal ceramic package for high reliability in space
applications.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
1.4
24
1.2
21
GA
1
18
0.8
15
NF
0.6
12
0.4
9
0.2
6
0
1
10
Frequency, f (GHz)
3
20 30
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
NE24283B
83B
UNITS
MIN
TYP
MAX
NFOPT1
Optimum Noise Figure at VDS = 2 V, IDS = 10 mA
f = 4 GHz
dB
f = 12 GHz
dB
0.35
0.6
0.7
GA1
Associated Gain at VDS = 2 V, IDS = 10 mA
f = 4 GHz
f = 12 GHz
dB
16.0
dB
10.0
11.0
P1dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
dBm
dBm
9.5
11.0
G1dB
Gain at P1dB, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
dB
11.8
dB
12.8
IDSS
Saturated Drain Current at VDS = 2 V, VGS = 0 V
mA
15
40
70
VP
Pinch-off Voltage at VDS = 2 V, IDS = 100 µA
V
-2.0
-0.8
-0.2
gm
Transconductance at VDS = 2 V, IDS = 10 mA
mS
45
60
IGSO
Gate to Source Leakage Current at VGS = -3 V
µA
0.5
10
RTH (CH-A) Thermal Resistance (Channel-to-Ambient)
°C/W
750
RTH (CH-C) Thermal Resistance (Channel-to-Case)
°C/W
350
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established of the production
line as a "go-no-go" screening tuned for the "generic" type but not for each specimen.
California Eastern Laboratories