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NE24200_00 Datasheet, PDF (1/4 Pages) NEC – ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)
ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET NE24200
(SPACE QUALIFIED)
FEATURES
• VERY LOW NOISE FIGURE:
NF = 0.6 dB typical at f = 12 GHz
• HIGH ASSOCIATED GAIN:
GA = 11.0 dB typical at f = 12 GHz
• LG = 0.25 µm, WG = 200 µm
DESCRIPTION
The NE24200 is a pseudomorphic Hetero-Junction FET chip
that utilizes the junction between Si-doped AlGaAs and
undoped InGaAs to create a two-dimensional electron gas
layer with very high electron mobility. This device features
mushroom shaped TiAl gates for decreased gate resistance
and improved power handling capabilities. The mushroom
gate results in lower noise figure and high associated gain for
space applications.
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
3
24
GA
2.5
21
2
18
1.5
15
1
0.5
NF
0
1
12
9
6
10
20 30
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
NFOPT1
GA1
P1dB
G1dB
IDSS
VP
gm
IGSO
RTH(CH-C)2
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Optimum Noise Figure at VDS = 2 V, IDS = 10 mA
f = 4 GHz
f = 12 GHz
Associated Gain at VDS = 2 V, IDS = 10 mA
f = 4 GHz
f = 12 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
Gain at P1dB, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
Saturated Drain Current at VDS = 2 V, VGS = 0 V
Pinch-Off Voltage at VDS = 2 V, IDS = 100 µA
Transconductance at VDS = 2 V, IDS = 10 mA
Gate to Source Leakage Current at VGS = -3 V
Thermal Resistance (Channel-to-Case)
UNITS
dB
dB
dB
dB
dBm
dBm
dB
dB
mA
V
mS
µA
°C/W
NE24200
00 (CHIP)
MIN
TYP
MAX
0.35
0.6
0.7
16.0
10.0
11.0
9.5
11.0
11.8
12.8
15
40
70
-2.0
-0.8
-0.2
45
60
0.5
10
260
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10
samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories