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MC-458CB64ESB Datasheet, PDF (1/16 Pages) NEC – 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM | |||
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DATA SHEET
MOS INTEGRATED CIRCUIT
MC-458CB64ESB, 458CB64PSB
8M-WORD BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Description
The MC-458CB64ESB and MC-458CB64PSB are 8,388,608 words by 64 bits synchronous dynamic RAM module
(Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.
These modules provide high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
⢠8,388,608 words by 64 bits organization
⢠Clock frequency and access time from CLK
Part number
/CAS Latency
Clock frequency
(MAX.)
MC-458CB64ESB-A10B
CL = 3
100 MHz
5 MC-458CB64PSB-A10B
CL = 2
CL = 3
CL = 2
67 MHz
100 MHz
67 MHz
⢠Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
⢠Pulsed interface
⢠Possible to assert random column address in every cycle
⢠Quad internal banks controlled by BA0 and BA1 (Bank Select)
⢠Programmable burst-length (1, 2, 4, 8 and Full Page)
⢠Programmable wrap sequence (Sequential / Interleave)
⢠Programmable /CAS latency (2, 3)
⢠Automatic precharge and controlled precharge
⢠CBR (Auto) refresh and self refresh
⢠Single +3.3 V ± 0.3 V power supply
⢠LVTTL compatible
⢠4,096 refresh cycles/64 ms
⢠Burst termination by Burst Stop command and Precharge command
⢠144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
⢠Unbuffered type
⢠Serial PD
Access time from CLK
(MIN.)
7 ns
8 ns
7 ns
8 ns
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M12263EJAV0DS00 (10th edition)
The mark ⢠shows major revised points.
Date Published February 2000 NS CP(K)
©
Printed in Japan
1996
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