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MC-4532CD647 Datasheet, PDF (1/16 Pages) NEC – 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE | |||
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DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4532CD647
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
5 Description
The MC-4532CD647EF and MC-4532CD647PF are 33,554,432 words by 64 bits synchronous dynamic RAM
module on which 16 pieces of 128M SDRAM: µPD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
⢠33,554,432 words by 64 bits organization
⢠Clock frequency and access time from CLK.
Part number
/CAS latency
Clock frequency
(MAX.)
Access time from CLK
(MAX.)
MC-4532CD647EF-A75
5
5 MC-4532CD647PF-A75
5
CL = 3
CL = 2
CL = 3
CL = 2
133 MHz
100 MHz
133 MHz
100 MHz
5.4 ns
6.0 ns
5.4 ns
6.0 ns
⢠Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
⢠Pulsed interface
⢠Possible to assert random column address in every cycle
⢠Quad internal banks controlled by BA0 and BA1 (Bank Select)
⢠Programmable burst-length (1, 2, 4, 8 and full page)
⢠Programmable wrap sequence (Sequential / Interleave)
5 ⢠Programmable /CAS latency (2, 3)
⢠Automatic precharge and controlled precharge
⢠CBR (Auto) refresh and self refresh
⢠All DQs have 10 ⦠±10 % of series resistor
⢠Single 3.3 V ± 0.3 V power supply
⢠LVTTL compatible
⢠4,096 refresh cycles/64 ms
⢠Burst termination by Burst Stop command and Precharge command
⢠168-pin dual in-line memory module (Pin pitch = 1.27 mm)
⢠Unbuffered type
⢠Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14276EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
The mark ⢠shows major revised points.
Printed in Japan
©
1999
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