MC-4516CB646 Datasheet, PDF (1/16 Pages) NEC – 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CB646
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
Description
The MC-4516CB646 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of
128M SDRAM: µPD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
• 16,777,216 words by 64 bits organization
• Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency
(MAX.)
Access time from CLK
(MAX.)
MC-4516CB646EF-A80
CL = 3
125 MHz
6 ns
CL = 2
100 MHz
6 ns
MC-4516CB646EF-A10
CL = 3
100 MHz
6 ns
CL = 2
77 MHz
7 ns
5
MC-4516CB646PF-A80
CL = 3
125 MHz
6 ns
CL = 2
100 MHz
6 ns
5
MC-4516CB646PF-A10
CL = 3
100 MHz
6 ns
CL = 2
77 MHz
7 ns
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled by BA0 and BA1 (Bank Select)
• Programmable burst-length (1, 2, 4, 8 and full page)
• Programmable wrap sequence (sequential / interleave)
• Programmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination by Burst Stop command and Precharge command
• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)
• Unbuffered type
• Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14334EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
The mark • shows major revised points.
©
Printed in Japan
1999