FB1A4M Datasheet, PDF (1/8 Pages) NEC – COMPOUND TRANSISTOR

DATA SHEET
COMPOUND TRANSISTOR
FB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
• Up to 0.7 A current drive available
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
FB1 SERIES LISTS
Products
Marking
FB1A4A
P30
FB1L2Q
P31
FB1A3M
P32
FB1F3P
P33
FB1J3P
P36
FB1L3N
P34
FB1A4M
P35
R1 (KΩ)
−
0.47
1.0
2.2
3.3
4.7
10
R2 (KΩ)
10
4.7
1.0
10
10
10
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
25
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
0.7
A
Collector current (Pulse)
IC(pulse) *
1.0
A
Base current (DC)
IB(DC)
20
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW≤10 ms, duty cycle≤50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16180EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928